Impurity perturbation to the host band structure and recoil of the impurity state

Abstract

At sufficiently high doping levels, the impurities in a semiconductor are expected to perturb the host band structure, and the perturbed host is then expected to alter the impurity state from that of the dilute limit (a recoil). Despite many decades of studies on impurities, it has been impossible to simultaneously and accurately track the evolution of the host band structure and the impurity state. The isoelectronically doped system provides a unique opportunity to track this evolution. GaAs:N, as a prototype system, has been investigated both experimentally and theoretically for this purpose.