Impurity Introduction during Epitaxial Growth of Silicon

Abstract

In this note it has been shown that the silicon iodide disproportionation process for growing epitaxial layers of silicon is also capable of transporting and codepositing desired impurities. Certain Group I11 and V elements such as B, P, As and Sb, can be introduced controllably into epitaxial layers of silicon during the growth. Impurity concentrations obtained cover 4 orders of magnitude, reaching far into the degenerate region. Therefore the process as described by Wajda et a1 is a new tool for the fabrication of various silicon semiconductor structures.