Abstract
The effect of trace impurities on high‐temperature strength is examined in Si3N4 sintered without additives. Strength degradation above 1000°C occurs only in the low‐purity material, which also exhibits an intergranular slow crack growth (SCG) rate 2 orders of magnitude faster than that of the high‐purity material at 1400°C. A relaxation peak of internal friction is observed only in the low‐purity material, at ≅1200°C, and the origin of this peak is ascribed to the initial stage of SCG—that is, the cavity‐nucleation stage, enhanced by impurities. Based on the present results, a model for impurity‐enhanced SCG is proposed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
