Abstract
It is widely known that materials properties are very sensitive to the presence of impurity elements. In this study we performed Rutherford backscattering spectroscopy (RBS) and particle induced X-ray emission (PIXE) analysis of impurity elements in carbon nanotubes (CNTs) fabricated by chemical vapor deposition. Impurities such as O, Si, P, S, Cl, Ar, Ti, Cr and Fe were found. The O was uniformly distributed and the most abundant impurity in CNTs. Sources of contamination were investigated and it was suggested that the presence of Si, S, Cl, Ti and Cr can be eliminated.
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