Abstract
The heterogeneous precipitation of oxygen in Cz silicon wafers has been investigated for the following implanted ions: Al, C, Si, P, and As, after anneal in the 800–1200 °C temperature range. The amount of precipitated oxygen, as measured by secondary ion mass spectrometry, ranges from 7 × 10 13 (As implant) to 3 × 10 14 cm −2 (Al implant) after an anneal at 1000°C for 20 min. The residual damage, as detected by transmission electron microscopy, does not show a significant dependence on the amount of precipitated oxygen as demonstrated by the analysis of Cz and epitaxial silicon wafers. The results are explained in terms of the interstitial trapping by species like C and Al, that enhances the heterogeneous formation of Si x O y clusters. The subsequent growth of precipitates has been modelled for Al and C implants and for several annealing temperatures and times.
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