Abstract
AbstractThe combined effects of crystal growth conditions and impurity (Sb, P, B, Ga) concentration on low‐angle boundary (LAB) formation in silicon single crystals growing by Czochralski technique was investigated. The dependence of LAB formation frequency and LAB parameters on crystal growth conditions and impurity content was found. Impurity effects on LAB formation become apparent at concentrations of about 1018 cm−3. – All impurity investigated decreases the probability of LAB formation, the acceptor impurity influence is stronger. At B concentration exceeding 2 · 1019 cm−3 LAB formation does not occur. – Results are interpreted in terms of scheme of LAB formation in thermal stress field of growing crystal. To explain observed impurity effects assumptions about dislocation drag and about raising of critical stresses for dislocation generation with doping are made.
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