Abstract
The effects of doped impurities of heavy fermion semiconductors are studied on the basis of the periodic Anderson model with randomly distributed Kondo holes. The slave boson mean-field theory is applied to treat the strong Coulomb interaction on f -orbitals, while the effect of disorder is analyzed by the coherent potential approximation (CPA). It is shown that the low-temperature behaviors of specific heat and resistivity are strongly affected by a small amount of impurities due to the formation of an impurity band in the hybridization gap. The results are compared with the experimental observation in the doped heavy fermion semiconductor (Ce 1- x La x ) 3 Bi 4 Pt 3 .
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