Abstract
Formation of donor centers in Czochralski-grown silicon doped with Dy, Ho, Er, and Yb by means of ion implantation is studied. Three kinds of donors with ionization energies less than 0.2eV make their appearance in implanted Cz-Si after annealing at T=700°C and 900°C. Shallow donor centers at ≈EC−40meV are attributed to oxygen-related donors. Two kinds of deeper donors turned out to be associated with complex defects containing rare-earth ions.
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