Abstract
We developed an electroluminescent (EL) device using boron-doped nanocrystalline silicon (nc-Si) particles that effectively inject a carrier into a luminous layer at a low direct current (DC) voltage of 2.0 V. The injection efficiency of the carrier strongly depends on the boron concentration. The injection quantity of a carrier in an EL device with a high boron concentration of 2.3 at.% was made almost double that of an EL device without boron doping. This was due to both the lowering of the series resistance of the EL device using the doping of boron into nc-Si particles and the coagulation of nc-Si particles using a hydrofluoric acid (HF) treatment. The injection quantity of the carrier can be considerably improved using boron doping into the nc-Si particles and the HF treatment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: JOURNAL OF THE ILLUMINATING ENGINEERING INSTITUTE OF JAPAN
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
