Abstract
ABSTRACTThe diffusion of an impurity into a solid which is irradiated by laser pulses of some milliseconds duration has been analysed in terms of effective diffusion time and temperature. In the case of Fe in Si, the diffusion coefficient is found to be similar to that measured by COLLINS and CARLSON, and independent of boron doping. In the case of Al in Si, a value of 2.10–10 cm2/ at 1400°C has been found both for single crystals and for fine-grained polycrystals.
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