Abstract
The conductivity of Al-Al2O3-metal diodes that show low-frequency negative resistance in their current—voltage characteristics depends on impurities in the oxide and on the metal used as counterelectrode. For heavily doped Al2O3, development of diode conductivity by application of voltages occurs at ∼4 V, independent of oxide thickness. For oxide films that are not deliberately doped, the field in the insulator is more important than voltage in developing conductivity. Al-Al2O3-metal diodes have been constructed with Ag, Au, Cu, Co, Sn, In, Bi, Pb, Al, and Mg counterelectrodes. The current—voltage characteristics which develop depend on the metal and on polarity of the diode voltage during development of conductivity. With Ag as counterelectrode, most diodes were initially shorted; with Mg as counterelectrode, no diode conductivity could be developed. Other metals fall in between and give peak currents in the current—voltage characteristics in the sequence Au, Cu, Co, Pb, Sn, Bi, In, Al. There is no correlation between Al-Al2O3-metal diode conductivity and metal radius or work function.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
