Abstract

The shift in the bound state energy of a two-dimensional donor-bound electron due to electron-phonon interactions is calculated using perturbation theory, variational techniques and path integrals. For finite well widths we find a 2% shift of the donor-level binding energy in a GaAs quantum well and a 10% shift in CdTe systems.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call