Abstract
A comparison is made between calculated impurity band densities of state in Si(P) for donor concentrations below that of the semiconductor-to-metal transition and experimental results obtained from photoluminescence spectra after subtracting an electron-hole droplet line. The theoretical results were obtained within the large interaction limit of the Hubbard model, assuming the impurities to be randomly distributed. The density of states was computed from cumulants appropriate to the low and high impurity density limit.
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