Abstract
AbstractPolycrystalline films of undoped GaSb, GaSb0.86As0.14, and GaSb0.8As0.2 were grown on glass substrates by molecular‐beam deposition. Hall‐effect measurements were performed in the temperature range of 10‐400 K. Temperature dependences of concentration and mobility of holes at low temperatures were well explained in terms of two‐band conduction consisting of impurity‐band and valence‐band conduction which is limited predominantly by potential barriers at grain boundaries. The procedure for analyzing the Hall‐effect data is extended to be applicable to the sample involving not only the impurity band but also an additional deep acceptor level as well as a compensating donor level, so that the experimental results at high temperatures can also be well simulated. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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