Abstract
The electrical transport properties of Mn doped InAs single crystal (InAs:Mn) were determined from temperature-dependent Hall effect measurements over the temperature range of 77–300 K. Both samples were found to be p-type attributed to Mn acceptors randomly substituting for indium lattice sites. The sample with relatively higher doping concentration exhibits characteristics with nearest-neighbor hopping conductance (NNH) in impurity band below 200 K. The ionization energy of the Mn acceptor in InAs is determined to be 27 meV from the analysis of PL spectrum of the lightly doped sample. It is determined from the value of ionization energy that the localized radius a0 of the manganese acceptor is 17 Å.
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