Abstract
We study the carrier transport and magnetic properties of group-IV-based ferromagnetic semiconductor Ge1-xFex thin films (Fe concentration x = 2.3%–14%) with and without boron (B) doping, by measuring their transport characteristics: the temperature dependence of resistivity, hole concentration, mobility, and the relation between the anomalous Hall conductivity versus conductivity. At relatively low x (=2.3%), the transport in the undoped Ge1-xFex film is dominated by hole hopping between Fe-rich hopping sites in the Fe impurity levels, whereas that in the B-doped Ge1-xFex film is dominated by the holes in the valence band in the degenerated Fe-poor regions. As x increases (x = 2.3%–14%), the transport in the both undoped and B-doped Ge1-xFex films is dominated by hole hopping between the Fe-rich hopping sites of the impurity band. The magnetic properties of the Ge1-xFex films are studied by various methods including magnetic circular dichroism, magnetization, and anomalous Hall resistance and are not influenced by B-doping. We show band profile models of both undoped and B-doped Ge1-xFex films, which can explain the transport and the magnetic properties of the Ge1-xFex films.
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