Abstract
AbstractGaP layers were grown by liquid phase epitaxy from tin solution on semi‐insulating GaAs substrates with various amounts of Te added to the melt (xTe = 10−4 …︁ 3 · 10−2). The Sn and Te concentrations in the layers were determined by chemical analysis as function of x. An analysis of the electrical measurements shows that the carrier transport in the layers is essentially determined by impurity band conduction effects.
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