Impurity and concentration dependence of growth rate during solid epitaxy of implanted Si

Abstract

The increase of the growth rate during solid-phase epitaxy in silicon implanted with B, P, As, and Sb is explained in terms of strain in the host lattice due to the addition of the dopant. The growth rate increases proportionally to the strain thus taking into account both species and concentration dependence below the solid solubility limit. The strain itself is in a simple way related to the difference between the tetrahedral covalent radii of Si and of the dopant.