Abstract
A transient global model has been created for modified directional solidification system. Since the efficiency of the solar cell mainly depends on the quality of the multi-crystalline silicon, it is important to modify the directional solidification system and to optimize the parameters. In multi-crystalline silicon solar cell, the concentration and segregation of impurities and precipitates plays a vital role in the conversion efficiency. Scalar parameters have been used to analyze the concentration and segregation of impurities in the grown mc-Si. The computation was developed to clarify the distributions of oxygen, carbon, nitrogen and silicon carbide. Five cases were discussed whereas except conventional case, all other cases show better results to grow good quality mc-Si ingot for solar cell applications.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
