Abstract
The possibility to incorporate impurities in the semiconductor crystal to change its optical and electrical properties is of paramount importance for the applications of semiconductors. The incorporation of an impurity to the semiconductor crystal corresponds to an effective addition of a charge carrier and a charged impurity ion to the system. The impurities will give rise to localized states in the forbidden energy gap. Based on the energy separation between the localized state and the band edge, the impurities are referred to as deep or shallow states.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
