Abstract
ABSTRACTIn our previous publications [1, 2 and 3], spreading resistance probe (SRP) measurements for quality control of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were studied, and the mechanism of nickel diffusion was simulated using technology computer-aided design (TCAD) modeling.Now, we continue to present the explanation of experimental results by modeling with the Synopsys TCAD package, whereby models for resistivity vs. grain size in implanted recrystallized silicon layers are implemented and compared with experiments.Findings show that the SRP method can be used for the characterization of the MILC process of amorphous silicon and that a comparison of experimental and calculated data allows both a turn from qualitative to quantitative analysis of recrystallized silicon film and an estimate of grain size. It has been found that grain size depends on location in the MILC region and on the time and temperature of recrystallization.
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