Abstract

This experimental study focuses on the deposition of TiCN thin film coating onto a bare p-type silicon substrate using physical vapor deposition (PVD) processes, with varying process parameters. The study employed a design of experiment in accordance with the L 16 orthogonal Array, followed by the implementation of the combinative distance-based assessment (CODAS) method functionalized with grey numbers to enhance the performance of the PVD process for the very first time in the film of thin film deposition. The study also conducted various analyses to examine the coating’s properties, including morphological, structural, microstructural, electrochemical, and mechanical properties. According to the result, the morphology of the coating was wavy in nature, with a smooth microstructure and a few agglomerated particles. The structure of the film indicated that TiCN had a single-phase FCC structure, while the mechanical and electrochemical properties improved with higher N2 flow rates. Additionally, the analysis by CODAS method functionalized with grey numbers suggested that substrate to target distance = 50 mm, N2 flow rate = 25 sccm, and bias voltage = −120 V were the most suitable condition for obtaining the best quality of TiCN thin film coating.

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