Improving Thermal Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors by Praseodymium Oxide Doping.

Abstract

Praseodymium-doped indium zinc oxide (PrIZO) channel materials have been fabricated by a solution process with conventional chemical precursor. The PrIZO-based thin-film transistors (TFTs) exhibited a field-effect mobility of 10.10 cm2/V s, a subthreshold swing value of 0.25 V/decade, and an Ion/ Ioff ratio of 108. The as-fabricated PrIZO-TFTs showed an improved device performance against positive bias temperature stress (PBTS shift of 1.97 V for 7200 s), which was evidently better than the undoped IZO-TFTs (PBTS shift of 9.52 V). This result indicates that the organic residual (-OCH3 and -CH2-) in metal-oxide semiconductor, which is confirmed to be a dominant effect on the performance of PBTS, can be passivated by the rare earth of praseodymium element. The residual is intended to be oxidized with a more stable ester group with the assistant of PrOx, weakening the electron-withdrawing characteristic during the thermal bias stress.