Abstract
To investigate the effects of embedded metal nano-island (NI) arrays on reducing the variations of the device switching parameters, we fabricated Pt/HfO2/TiN, Pt/TaOx/HfO2/TiN devices, as well as devices with embedded NI arrays, including Pt/TaOx/HfO2/Pt NI/TiN and Pt/TaOx/HfO2/Ti NI/TiN devices. Compared to devices without nano-islands, the Pt/TaOx/HfO2/Pt NI/TiN devices with abrupt resistive switching behavior exhibit more stable resistance states (coefficient of variations (CVs) of RHRS and RLRS are 11.9 % and 13.0 %, respectively), and a large on/off ratio (>103), representing a high performance level among the HfO2-based non-volatile memristors reported to date, but the devices require a Forming process. The Pt/TaOx/HfO2/Ti NI/TiN devices with analog resistive switching behavior show low operating voltage (≤1 V), low resistance variations (CVs of RHRS, and RLRS are 15.8 %, and 17.6 %, respectively), but their on/off ratio (<10) is significantly reduced. The results indicate that embedding metal nano-island arrays decreases the fluctuations in device switching parameters, the different properties of nano-island materials significantly affect the abrupt/analog switching behavior, on/off ratio and the Forming of the non-volatile memristors. The methods employed in this study can be extended or evolved for other memristors to enhance their performance and applicability.
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