Improving the spatial resolution in CZT detectors using charge sharing effect and transient signal analysis: Simulation study

Abstract

Cadmium Zinc Telluride (CZT) semiconductor detectors are capable of providing superior energy resolution and three-dimensional position information of gamma ray interactions in a large variety of fields, including nuclear physics, gamma-ray imaging and nuclear medicine. Some dedicated Positron Emission Tomography (PET) systems, for example, for breast cancer detection, require higher contrast recovery and more accurate event location compared with a whole-body PET system. The spatial resolution is currently limited by electrode pitch in CZT detectors. A straightforward approach to increase the spatial resolution is by decreasing the detector electrode pitch, but this leads to higher fabrication cost and a larger number of readout channels. In addition, inter-electrode charge spreading can negate any improvement in spatial resolution. In this work, we studied the feasibility of achieving sub-pitch spatial resolution in CZT detectors using two methods: charge sharing effect and transient signal analysis. We noted that their valid ranges of usage were complementary. The dependences of their corresponding valid ranges on electrode design, depth-of-interaction (DOI), voltage bias and signal triggering threshold were investigated. The implementation of these two methods in both pixelated and cross-strip configuration of CZT detectors were discussed. Our results show that the valid range of charge sharing effect increases as a function of DOI, but decreases with increasing gap width and bias voltage. For a CZT detector of 5mm thickness, 100µm gap and biased at 400V, the valid range of charge sharing effect was found to be about 112.3µm around the gap center. This result complements the valid range of the transient signal analysis within one electrode pitch. For a signal-to-noise ratio (SNR) of ~17 and preliminary measurements, the sub-pitch spatial resolution is expected to be ~30µm and ~250µm for the charge sharing and transient signal analysis methods, respectively.