Abstract
In this work, a 1.42μm thin layer using zam-zam water has been formed as a thin interlayer to modify the Schottky barrier height (SBH) between Au contacts and Si substrates. Better rectifying ratio (2.14×105 at±1V bias) has been obtained according to Au/p-Si Schottky diode. The variations in the electrical characteristics of Au/zam-zam (ZZ) layer/p-Si Schottky diode have been investigated as a function of temperature, x-ray irradiation and illumination by using current–voltage (I–V) measurements. It has been found that the I–V characteristics of the Au/ZZ layer/p-Si Schottky diode strongly depend on temperature, x-ray irradiation and illumination. The temperature dependent of the junction parameters such as ideality factor and the barrier height has been explained by barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface of the junction materials. Furthermore, the I–V characteristic of the Au/ZZ layer/p-Si Schottky diode has showed a good illumination response like a solar cell.
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