Improving the Polishing Speed and Surface Quality of 4H-SiC Wafers with an MnO<sub>2</sub>- Based Slurry

Abstract

We carried out chemical mechanical polishing (CMP) on commercially available 6 inch SiC wafers (epi-ready products) with slurries containing different abrasive types and evaluated the latent scratch density from the mapping measurement of the wafers using mirror projection electron microscope (MPJ). Comparing to the wafer before polishing, the latent scratch density decreased on the wafer polished with MnO2+KMnO4, while that increased by polishing with Al2O3+KMnO4. The two-step polishing using first Al2O3+KMnO4 and then SiO2+H2O2 can reduce the latent scratch density to the same level as that with MnO2+KMnO4, but long polishing time is required because of the low polishing rate in the process with SiO2+H2O2. We investigated the reason why MnO2 slurry can suppress the occurrence of latent scratches by a polishing test on a wafer with an SiO2 film on its (0001)Si surface. The results suggest the oxidation of the SiC surface is rate-determining step for polishing with MnO2+KMnO4. It was also found that wafers without an SiO2 film could not be polished with only MnO2 abrasives. Thus the mechanical contribution to polishing by MnO2 abrasives in KMnO4-based slurry is smaller than the chemical contribution, which can suppress the occurrence of latent scratches. KMnO4-based slurry containing MnO2 abrasives performs the CMP process with low latent scratch density in a time shorter than that containing Al2O3 or SiO2 abrasives.