Abstract
The grain size of perovskite films is a key factor to optimize the performance of perovskite photovoltaic devices. Herein, a new route is developed in this paper to prepare CH3NH3PbI3 (MAPbI3) films with a better morphology and crystallization. This method includes the spin coating deposition of perovskite films with a precursor solution of PbI2 and CH3NH3I at the molar ratio 1 : 1 and thermal annealing (TA). The thermal annealing is conducted with a thermal-induced process to realize grain growth with solvent evaporation. In addition, a mixed solvent vapor treatment in acetic acid with chlorobenzene (HAc/CB) improves the morphology and crystallization of films further. As a result, the photovoltaic device based on the perovskite film treated by mixed HAc/CB solvent exhibits the best efficiency of 13.15% in comparison to the control device with 11.44% under AM 1.5G irradiation (100 mW cm−2).
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