Improving the performance of the organic thin-film transistors with thin insulating lithium fluoride buffer layer

Abstract

The pentacene-based organic thin-film transistors (OTFTs) with a thin insulating lithium fluoride (LiF) buffer layer between the pentacene and source/drain electrodes were fabricated. Compared with conventional OTFTs, the introduction of the buffer layer (1 nm) leads to field-effect mobility increases from 0.16 to 0.5 cm 2/Vs, and threshold voltage downshifts from −19 to −8 V for the linear region. The on/off current ratio is improved to a level of 10 5 for the off-state current decreasing. These improvements are attributed to (i) tunneling injection through the LiF layer and (ii) interface dipole energy barrier decreasing and contact resistance reduction between pentacene and Au. The results demonstrate that it is an effective method to improve the device characteristics by using a buffer layer.