Abstract
8nm Fe3O4 nanoparticles (NPs) were successfully doped into poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) to fabricate ITO/PEDOT:PSS/P3HT:PCBM:Fe3O4/Al solar cell along with a heterojunction device of Fe3O4/p-GaAs by depositing them on p-GaAs substrates. The experimental results revealed that the presence of Fe3O4 nanoparticles (NPs) in the ITO/PEDOT:PSS/P3HT:PCBM/Al solar cell improved its performance with respect to the one without Fe3O4. For example, power conversion efficiency was increased from 1.09% to 2.22% when doping 5wt% of Fe3O4 NPs to P3HT:PCBM. This was attributed to increase of the light absorption in the presence of Fe3O4 NPs doping. Furthermore, the analysis of the current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of the Fe3O4/p-GaAs heterojunction have been studied successfully. The experimental barrier height Φb and ideality factor n were determined as 0.80eV and 1.53, respectively, from the experimental I–V plots. In addition, the value of the Φb obtained from the C-V characteristics was 0.95eV (f=500kHz). The mismatch between barrier heights obtained from both measurements was explained by the two techniques are based on different nature. The interface state density of the Fe3O4/p-GaAs heterojunction was determined from 5.16×1014cm−2eV-1 to 1.34×1015cm−2eV−1.
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