Abstract
In this paper, Sb2S3 thin-film solar cells are fabricated by the vapor transport deposition (VTD) method. The effect of the source-substrate proximity on the performance of Sb2S3 thin-film solar cells has been investigated and comparative studies of different source-substrate proximity are carried out. The device efficiency is improved from 0.83 to 3.02% by optimizing the source-substrate proximity with the augment of open-circuit voltage, short-circuit current density and fill factor. X-ray diffraction and scanning electron microscopy studies indicate that the deposited Sb2S3 films can achieve optimal grain orientation, high crystallinity, and compact morphology. Moreover, the current transport mechanism is analyzed in detail from dark current density–voltage (J-V) measurements and shows the optimal sample to be least affected by Shockley-Read-Hall recombination and space-charge-limited current (SCLC). Meanwhile, temperature and light intensity-dependent open-circuit voltage measurements reveal the carrier recombination rates are lowest for the optimal cell in all regions, including the CdS/Sb2S3 interface, the space-charge region (SCR), and the quasi-neutral region (QNR). These can account for the efficiency enhancement of the optimal cell and can be used to facilitate the further development of Sb2S3 thin-film solar cells.
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