Abstract
In this letter, AlGaN/GaN Fin-HEMTs with different fin configurations were fabricated. It is found that the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs are improved by the reduction of the fin length, which can be attributed to the modulation of source resistance by varying the fin length. The value and linearity of current cutoff frequency (fT) of AlGaN/GaN Fin-HEMTs also benefit from the improvement of the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs.
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