Abstract
The light extraction efficiency caused by total internal reflection is low. Based on the analysis of the existing technology, a new design scheme is proposed in this paper to improve the light extraction efficiency. The air gap photonic crystal is embedded on the GaN-based patterned sapphire substrate, which can reduce line misalignment and improve light extraction efficiency. The internal structure of the GaN-based LED epitaxial layer is composed of an electron emission layer, a quantum well in the light-emitting recombination region, and an electron blocking layer. Experimental results show that this method significantly improves the extraction efficiency of LED light.
Highlights
Due to the small size and high efficiency of light-emitting diodes (LED), they are gradually becoming a substitute for traditional light sources
The performance of light-emitting diodes is mainly determined by two advantages, namely the internal quantum efficiency (IQE) of the active area and the light extraction efficiency [2]
This paper proposes a suitable LED emission model to improve luminous efficiency
Summary
Due to the small size and high efficiency of light-emitting diodes (LED), they are gradually becoming a substitute for traditional light sources. GaN-based light-emitting diodes provide new opportunities for full-color lightemitting diode LED displays and white light sources. The performance of light-emitting diodes is mainly determined by two advantages, namely the internal quantum efficiency (IQE) of the active area and the light extraction efficiency [2]. The recent technology used to improve the light extraction efficiency, including the conventional surface crystal etching on the gas-phase GaN interface and the GaN substrate interface Technology, as well as the structure of the photonic crystal itself [5]. On this basis, this paper proposes a suitable LED emission model to improve luminous efficiency
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