Abstract
In highly efficient halide perovskite solar cells (PSCs), nickel oxide (NiOx) have been widely used as an inorganic hole transport layer (HTL). However, the solution-processed NiOx films always have pinholes, along with inferior contact with perovskite layer. Herein, a surfactant of hexadecylbenzene (HAB) was applied to improve the hole extraction from perovskite to NiOx HTL. With the modification of HAB, a high quality perovskite layer was obtained. Due to the enhanced hole extraction, the HAB modified device showed a higher short-circuit current density (JSc ) and a power conversion efficiency of 17.11%. Therefore, this work offers a novel strategy in interfacial engineering for high-efficiency PSCs.
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