Abstract
A new configuration of conductive atomic force microscope (CAFM) is presented, which is based in a standard CAFM where the typical I-V converter has been replaced by a log I-V amplifier. This substitution extends the current dynamic range from 1-100 pA to 1 pA-1 mA. With the broadening of the current dynamic range, the CAFM can access new applications, such as the reliability evaluation of metal-oxide-semiconductor gate dielectrics. As an example, the setup has been tested by analyzing breakdown spots induced in ultrathin gate SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layers.
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