Abstract
The impact of the interfacial hexagonal boron nitride (h‐BN) layer between the channel and ionic liquid (IL) on an IL‐gated 2D rhenium disulfide (ReS2) field‐effect transistor (FET) is investigated. Through electrical DC and low‐frequency noise (LFN) characterization, it is found that the interfacial h‐BN layer enhances mobility and reduces the noise level of the device due to suppressed traps and improved channel interface. These experimental findings suggest that the use of interfacial h‐BN layer in 2D FETs is a promising method for enhancing the device performance.
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Schedule a callMore From: physica status solidi (RRL) – Rapid Research Letters
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