Improving the efficiency above 35 % of MoS2-based solar cells by through optimization of various wide-bandgap S-chalcogenides ETL

Abstract

Molybdenum disulfide (MoS2)-based photovoltaic cells are increasingly attracting researchers’ due to their outstanding semiconducting properties. Single junction MoS2 based solar cell have been investigated with three distinct electron transport layer (ETL) layers made of SnS2, In2S3 and ZnSe in detail with and without back surface field (BSF). A thorough numerical analysis has been conducted of the effects of band alignment, defect density, absorber layer thickness, buffer layer thickness, interface defect density, electron and hole concentration, generation and recombination, open circuit voltage (VOC), short circuit current (JSC), fill factor (FF), and power conversion efficiency (PCE) via SCAPS-1D simulation software. The MoS2 based solar cell produced the photo conversion efficiency (PCE) of 24.77 % with VOC of 0.913 V, JSC of 31.274 mA/cm2, and FF of 86.77 % without BSF. On the other hand, after in depth analysis, according to simulation results, SnS2 ETL produced the highest PCE of 35.60 % than ZnSe(33.56 %) and In2S3(34.94 %) ETL with VOC of 1.07 V, JSC of 37.55 mA/cm2, and FF of 88.80 % with inserting only 30 nm V2O5 BSF layer. The suggested research might provide information and a workable strategy for producing a MoS2-based thin-film solar cell that is affordable.