Abstract
The intermediate bus architecture (IBA) is currently the most popular power system architecture in computing and telecommunications equipment. It typically consists of a +48 V system power distribution bus that feeds on-board isolated converters, which in turn supply power to a 12 V power bus. From the 12 V power bus, the final power is delivered to the end loads by regulated non-isolated point of load (POL) converters. In this paper we demonstrate substantial system gains using enhancement mode gallium nitride power transistors in high frequency isolated and non-isolated DC-DC converters. These transistors, also known as eGaN® FETs, have been commercially available for over three years and are making significant inroads replacing the aging silicon power MOSFET.
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