Improving stability of photoluminescence of ZnSe thin films grown by molecular beam epitaxy by incorporating Cl dopant

Abstract

This investigation studies the effect of chlorine (Cl) dopant in ZnSe thin films that were grown by molecular beam epitaxy on their photoluminescence (PL) and the stability thereof. Free excitonic emission was observed at room-temperature in the Cl-doped sample. Photon irradiation with a wavelength of 404 nm and a power density of 9.1 W/cm2 has a much stronger effect on PL degradation than does thermal heating to a temperature of 150 °C. Additionally, this study shows that the generation of nonradiative centers by both photon irradiation and thermal heating can be greatly inhibited by incorporating Cl dopant.