Improving perovskite solar cell efficiency and prolonging durability via interface modification with guanidinium iodide by post treatment method

Abstract

The performance of perovskite solar cells (PSCs) can be significantly compromised by the presence of halide vacancies on the perovskite surface, leading to defects and a decline in stability and efficiency. Effectively addressing this challenge, the application of Guanidinium iodide (GAI) as a post dopant treatment (POST) has demonstrated success. GAI (POST) not only reduces surface defects but also minimizes halide deficiencies and mitigates losses due to interfacial charge recombination. When incorporating a GAI additive at a solution concentration of 1.5 mg/ml in the modification layer with the perovskite composition Cs0.1FA0.8MA0.1PbI3, the PSC showed a notable power conversion efficiency (PCE) of 20.7%, surpassing the 16.3% efficiency of the control device. Moreover, the adapted device demonstrated an impressive fill factor (FF) of 80.1%. Notably, the enhanced film of the modified device maintained over 80% of its initial efficiency for more than 312 h, highlighting the prospect of creating affordable, effective, and durable PSCs.