Abstract
The crater-nanorod-like double-textured ZnO:Al (AZO) transparent conducting films were prepared by combining wet-etching AZO seed layers and hydrothermal growing AZO nanorods. Different morphologies of the nanorod-like structures determined by the etching time of seed layers were observed. The influence of AZO seed layers etched for different times on the properties of double-textured AZO films was systematically compared and investigated, such as the structures, morphologies, optoelectronic properties and light-trapping abilities. The relationship between morphologies and light-trapping abilities of AZO nanorod-like structures grown on the etched seed layers was discussed. The crater-nanorod-like structures of double-textured AZO films with seed layers etched for 15 min not only maintained low resistance and high transmittance but also exhibited higher haze value, which are effective double-textured structures for improving light trapping.
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