Abstract
Lead sulfide (PbS) films are important infrared-active materials, and they are generally made by physical vapor deposition techniques such as magnetron sputtering. However, these deposition techniques are costly, and the PbS films need high-temperature oxygen-treatment to passivate sulfide vacancies and lead ion cluster defects. In this work, we report a facile chemical water bath to fabricate highly crystalline PbS films, where their defects were passivated by a controllable low-temperature ultraviolet-ozone (UVO) treatment, leading to a significantly reduced dark current and thus an improved room-temperature photodetectivity. The PbS photodetectors exhibited a specific detectivity increasing from 1.94 × 1010 to 4.40 × 1010 Jones under the reverse biased condition of −0.8 V after the UVO treatment. This work has demonstrated a low-cost production of high-quality PbS films and a low-temperature defect-passivation approach to improve infrared photodetection performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
