Abstract
Improved hot-carrier resistance of narrow channel fluorinated N-channel MOSFETs is realized by high-energy (2 MeV) fluorine ion implantation. The fluorinated N-MOSFETs exhibit smaller densities of hot-electron-induced interface traps and oxide electron traps. In addition, the F implantation process is found to suppress the narrow channel effect, possibly due to the retardation of B redistribution in the channel stop region.
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