Abstract
This work investigates the impact of source-drain-gate electrode overlap geometry on the reliability of organic thin-film transistors (OTFTs). The degradation of electrical characteristics after stress-induced hot carrier instability (HCI) is analyzed by comparing <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{\text {D}}$ </tex-math></inline-formula> - <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\text {G}}$ </tex-math></inline-formula> transfer curves and C-V characteristic curves before and after the stress test. Severe degradation is observed in standard symmetry and source-extended structures, but increased reliability is observed in a drain-extended structure. A physical model is proposed to explain this behavior in the letter, and Technology Computer-Aided Design (TCAD) simulations are used to explore the electrical field distribution in the devices for further understanding.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
