Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun-Yu Lin,Mei-Lian Fan,Jen-Chou Tseng,Ming-Hsiang Song,Li-Wei Chu,Ming-Dou Ker

doi:10.1109/irps.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun-Yu Lin, Mei-Lian Fan + Show 4 more

https://doi.org/10.1109/irps.2014.6861132

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Publication Date: Jun 1, 2014

Citations: 12

Affiliation: National Taiwan Normal University, National Yang Ming Chiao Tung University, Taiwan Semiconductor Manufacturing Company (Taiwan)

#Electrostatic Discharge #Improve Electrostatic Discharge Robustness + Show 8 more

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Abstract

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

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