Abstract
We report results of a novel technique using an inductively coupled plasma mass spectrometer as a method of sample preparation for alpha spectrometry. Two samples were produced, a low- and high-bias implant, the potential being the difference between the implant material and the exit ion lens. The two implants were imaged to reveal the geometrical distribution and radiometrically counted and compared to a traditional stipple and electrodeposited 241Am sample. This method produced thin, contaminant free 241Am samples which yielded energy resolution of $$\approx 20$$ keV full-width at half-maximum which is the lower limit of the large area (450 mm2) passivated implanted planar silicon detector used in this research.
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