Improvements of electrical and optical properties of InAlAs grown by molecular beam epitaxy

Abstract

Great improvement in the electrical and optical properties of molecular-beam-epitaxy-grown InAlAs was obtained by using InP buffer layers and high substrate temperatures of 555 °C. Undoped InAlAs layers are n type and the highest room temperature electron mobility is as high as 5100 cm2/V s with a carrier concentration of 1×1015 cm−3. The room-temperature photoluminescence spectrum has a sharp edge emission with a spectral half-width as narrow as 42 meV.