Improvements in the Electrical Performance of IC MOSFET Components Using Diamond Layout Style Versus Traditional Rectangular Layout Style Calculated by Conformal Mapping

Abstract

In the first part of this article, we have proposed an innovative approach to improve the drain current model of the MOSFETs implemented with the diamond layout style (DLS), regarding the longitudinal corner effect (LCE). The proposed model is more accurate than a previous model compared to 3-D Technology Computer-Aided Design (3-D TCAD) simulation results. The new model has an innovative analytical description based on a conformal mapping theory. As a conformal mapping, there has been chosen a Schwarz–Christoffel transformation (SC). The maximal deviation values of the aspect ratio calculated by LCE are in the range from −27% to +38%. In counterpart with the new SC analytical description of DLS, the maximal deviation values are in the range from 0% to −5.5%. The second part of this article describes improvements in the electrical performance of the N-MOSFET components by using DLS counterpart to traditional rectangular layout style (RLS). Both layout style DLS, RLS, respectively, have the same process settings, as well as they are keeping the same gate area ${A}$ , and an aspect ratio width to length ${W}/{L}$ to preserve the same input conditions for their analysis. The maximal drain current increasing for the simulated DLS MOS transistor is over 20% for effective aspect ratio ( ${W}/{L}$ ) $_{\text {eff,SCT,num}}$ equal to 2.0 and angle is set to 60°. The presented model has a very good analytic description with the error level lower than 3%.