Abstract
ABSTRACTThallium bromoiodide, a tuneable band gap semiconductor system, was investigated as a photodetector for scintillation spectrometers. Extensive zone refining of starting materials, based on numerical simulations, considerably enhanced the electrical resistivity to 1011 Ωcm. In addition, accelerated crucible rotation technique (ACRT) crystal growth and after-growth annealing have improved the charge carrier mobility-lifetime product. However, a relatively low signal-to-noise ratio due to a high dielectric constant and relatively low quantum efficiency continues to be an obstacle to achieving high performance, large area T1BrxI1−xphotodetectors.
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