Abstract
We have investigated the Si doping of InP and GaInAs in metalorganic molecular beam epitaxy (MOMBE) by using a conventional Si effusion cell. In order to reduce the formation of SiC promoted by the background gases in MOMBE, we introduced a liquid nitrogen cooled baffle between the cell and the mechanical shutter. The results show that the passivating reaction can be substantially suppressed by a proper treatment of the source cell. The doping efficiency remains constant over a long period of operation corresponding to a large total layer thickness (>100 μm). The comparison of SIMS analysis with Hall data reveals an electrical activation of Si in InP up to 100% and about 65% for Si in GaInAs. These results and the investigations on doping profiles show that Si is a suitable donor in InP and GaInAs in the MOMBE process.
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